low noise amplifiers - chip 1 1 - 168 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com gaas hemt mmic low noise amplifier, 35 - 45 ghz v02.0209 general description features functional diagram noise figure: 2 db gain: 16 db @ 40 ghz p1db output power: +6 dbm supply voltage: +4v @ 87 ma die size: 2.7 x 1.44 x 0.1 mm electrical specifi cations* , t a = +25 c, vdd= +4v typical applications this hmc-alh376 is ideal for: ? point-to-point radios ? point-to-multi-point radios ? test equipment & sensors ? military & space the hmc-alh376 is a gaas mmic hemt three stages, self-biased low noise amplifi er die which operates between 35 and 45 ghz. the amplifi er provides 16 db of gain, a 2 db noise fi gure and +6 dbm of output power at 1 db gain compression while requiring only 87 ma from a single +4v supply. this self-biased lna is ideal for integ- ration into hybrid assemblies or multi-chip-modules (mcms) due to its small size (3.9 mm2). hmc-alh376 parameter min. typ. max. min. typ. max. units frequency range 35 - 40 40 - 45 ghz gain 15 16 10 12 db noise figure 2 3 2.2 3 db input return loss 10 17 db output return loss 16 18 db output power for 1 db compression 6 6 dbm supply current (idd) (vdd= +4v) 87 87 ma *unless otherwise indicated, all measurements are from probed die
low noise amplifiers - chip 1 1 - 169 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc-alh376 v02.0209 gaas hemt mmic low noise amplifier, 35 - 45 ghz noise figure vs. frequency output return loss vs. frequency linear gain vs. frequency input return loss vs. frequency -30 -25 -20 -15 -10 -5 0 35 37 39 41 43 45 return loss (db) frequency (ghz) 0 1 2 3 4 5 35 37 39 41 43 45 noise figure (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 35 37 39 41 43 45 return loss (db) frequency (ghz) 0 5 10 15 20 25 35 37 39 41 43 45 gain (db) frequency (ghz)
low noise amplifiers - chip 1 1 - 170 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc-alh376 v02.0209 gaas hemt mmic low noise amplifier, 35 - 45 ghz outline drawing absolute maximum ratings electrostatic sensitive device observe handling precautions notes: 1. all dimensions are in inches [mm]. 2. typical bond pad is .004 square. 3. backside metallization: gold. 4. backside metal is ground. 5. bond pad metallization: gold. 6. connection not required for unlabeled bond pads. 7. overall die size .002 drain bias voltage +5.5 vdc rf input power (35 - 40 ghz) -5 dbm rf input power (40 - 45 ghz) -1 dbm channel temperature 180 c storage temperature -65 to +150 c operating temperature -55 to +85 c die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
low noise amplifiers - chip 1 1 - 171 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1rfin this pad is ac coupled and matched to 50 ohms. 2vdd power supply voltage for the amplifi er. see assembly for required external components. 3rfout this pad is ac coupled and matched to 50 ohms. die bottom gnd die bottom must be connected to rf/dc ground. pad descriptions hmc-alh376 v02.0209 gaas hemt mmic low noise amplifier, 35 - 45 ghz
low noise amplifiers - chip 1 1 - 172 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram note 1: bypass caps should be 100 pf (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifi er. note 2: best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. hmc-alh376 v02.0209 gaas hemt mmic low noise amplifier, 35 - 45 ghz
low noise amplifiers - chip 1 1 - 173 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd pro- tective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc-alh376 v02.0209 gaas hemt mmic low noise amplifier, 35 - 45 ghz
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